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THRESHOLD VOLTAGE VARIATIONS IN N-CHANNEL MOS-TRANSISTORS AND MOSFET-BASED SENSORS DUE TO OPTICAL RADIATION

被引：13
作者：
WLODARSKI, W
BERGVELD, P
VOORTHUYZEN, JA
机构：
来源：
SENSORS AND ACTUATORS | 1986年 / 9卷 / 04期
关键词：
D O I：
10.1016/0250-6874(86)80063-4
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
引用
收藏
页码：313 / 321
页数：9
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