ELECTRON-MICROSCOPIC AND ION-SCATTERING STUDIES OF HETEROEPITAXIAL TIN-DOPED INDIUM OXIDE-FILMS

被引：16

作者：

KAMEI, M ^{[1
]}

SHIGESATO, Y ^{[1
]}

TAKAKI, S ^{[1
]}

HAYASHI, Y ^{[1
]}

SASAKI, M ^{[1
]}

HAYNES, TE ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37831

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 05期

关键词：

D O I：

10.1063/1.112292

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The microstructure of heteroepitaxial tin-doped indium oxide (ITO) films were studied in detail.The surface morphology of the heteroepitaxial ITO film consisted of square-shaped, in-plane oriented subgrains (approximately 300 angstrom) in contrast to that of the polycrystalline film (characteristic grain-subgrain structure). The subgrain boundaries were predominantly formed along the {110} planes in the ITO film and dislocations were observed primarily along the subgrain boundaries. Ion channeling measurements showed the dislocation density of this film to be approximately 3 x 10(10)/cm2, and the angular distribution of the ion channeling yield showed that the subgrains are aligned to within better than 0.3-degrees (standard deviation).

引用

页码：546 / 548

页数：3

共 10 条

[1] MONTE CARLO CHANNELING CALCULATIONS [J].