MODELING OF EMITTER-BASE BULK AND PERIPHERAL SPACE-CHARGE-LAYER RECOMBINATION CURRENTS IN BIPOLAR-TRANSISTORS

被引：3

作者：

CHAMBERLAIN, NG ^{[1
]}

ROULSTON, DJ ^{[1
]}

机构：

[1] UNIV WATERLOO, DEPT ELECT ENGN, WATERLOO N2L 3G1, ONTARIO, CANADA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 12期

关键词：

D O I：

10.1109/T-ED.1976.18661

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1345 / 1346

页数：2

共 8 条

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[2]

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[3] P-N-P-N TRANSISTOR SWITCHES [J].

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[4]

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[5] INFLUENCE OF SURFACE CONDITIONS ON SILICON PLANAR TRANSISTOR CURRENT GAIN [J].

REDDI, VGK .

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[6] SIMPLIFIED COMPUTER-AIDED ANALYSIS OF DOUBLE-DIFFUSED TRANSISTORS INCLUDING 2-DIMENSIONAL HIGH-LEVEL EFFECTS [J].

ROULSTON, DJ ;

SEHGAL, J ;

CHAMBERL.SG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) :809-&

[7] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

[8]

SAH CT, 1962, IRE T ELECTRON DEV, VED9, P94, DOI DOI 10.1109/T-ED.1962.14895

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