VOLATILITY DIAGRAMS FOR SILICA, SILICON-NITRIDE, AND SILICON-CARBIDE AND THEIR APPLICATION TO HIGH-TEMPERATURE DECOMPOSITION AND OXIDATION

被引：165

作者：

HEUER, AH ^{[1
]}

LOU, VLK ^{[1
]}

机构：

[1] GE CORP RES & DEV,SCHENECTADY,NY 12309

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1990年 / 73卷 / 10期

关键词：

oxidation; silica; silicon carbide; silicon nitride; silicon oxynitride;

D O I：

10.1111/j.1151-2916.1990.tb06677.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Volatility diagrams—isothermal plots showing the partial pressures of two gaseous species in equilibrium with the several condensed phases possible in a system—are discussed for the Si‐O and Si‐N systems, and extended to the Si‐N‐O and Si‐C‐O systems, in which the important ceramic constituents SiO2, Si3N4, Si2N2O, and SiC appear as stable phases. Their use in understanding the passiveactive oxidation transitions for Si, Si3N4, and SiC are demonstrated. Copyright © 1990, Wiley Blackwell. All rights reserved

引用

页码：2789 / 2803

页数：15

共 12 条

[1]

Barin I., 2013, THERMOCHEMICAL PROPE

[2]

BESSMAN, 1977, ORNLTM5775

[3] THERMODYNAMICS OF THE SI-N-O SYSTEM AND KINETIC MODELING OF OXIDATION OF SI3N4 [J].