SEMIINSULATING INP GROWN AT LOW-TEMPERATURE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：18

作者：

GARDNER, NF ^{[1
]}

HARTMANN, QJ ^{[1
]}

STOCKMAN, SA ^{[1
]}

STILLMAN, GE ^{[1
]}

BAKER, JE ^{[1
]}

MALIN, JI ^{[1
]}

HSIEH, KC ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 03期

关键词：

D O I：

10.1063/1.112374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of semi-insulating epitaxial InP layers at low substrate temperature (460-degrees-C) by low-pressure metalorganic chemical vapor deposition has been demonstrated using CCl4 as a dopant source. The resistivity of the material is a function of diluted CCl4 flow rate used during growth. For flow rates less than 5 sccm the material is n type, but for higher flows the resistivity of the material is approximately 5X10(9) OMEGA cm. The semi-insulating behavior of the material is maintained after annealing at 600-degrees-C. Transmission electron microscopy does not reveal the presence of phosphorus precipitates in as-grown samples or in samples annealed at 400 and 600-degrees-C. There is significant carbon, hydrogen, and chlorine incorporation in the layers, as measured by secondary ion mass spectrometry. Room-temperature photoluminescence measurements suggest that nonradiative recombination is significant in the material and increases in samples grown with higher CCl4 flows.

引用

页码：359 / 361

页数：3

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