HETEROJUNCTION VALENCE-BAND-DISCONTINUITY DEPENDENCE ON FACE ORIENTATION - COMMENT

被引:21
作者
VAN DE WALLE, CG [1 ]
MARTIN, RM [1 ]
机构
[1] XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA
来源
PHYSICAL REVIEW B | 1988年 / 37卷 / 09期
关键词
D O I
10.1103/PhysRevB.37.4801
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:4801 / 4802
页数:2
相关论文
共 6 条
  • [1] HARRISON WA, COMMUNICATION
  • [2] ATOMIC-STRUCTURE AND PROPERTIES OF POLAR GE-GAAS(100) INTERFACES
    KUNC, K
    MARTIN, RM
    [J]. PHYSICAL REVIEW B, 1981, 24 (06) : 3445 - 3455
  • [3] MUNOZ A, 1987, PHYS REV B, V35, P6468, DOI 10.1103/PhysRevB.35.6468
  • [4] THEORETICAL-STUDY OF BAND OFFSETS AT SEMICONDUCTOR INTERFACES
    VAN DE WALLE, CG
    MARTIN, RM
    [J]. PHYSICAL REVIEW B, 1987, 35 (15): : 8154 - 8165
  • [5] THEORETICAL CALCULATIONS OF HETEROJUNCTION DISCONTINUITIES IN THE SI/GE SYSTEM
    VAN DE WALLE, CG
    MARTIN, RM
    [J]. PHYSICAL REVIEW B, 1986, 34 (08): : 5621 - 5634
  • [6] VANDEWALLE CG, 1986, THESIS STANFORD U