POSTIRRADIATION ENHANCED LATTICE SITE OCCUPATION OF CADMIUM IN THE IMPLANTED AL-CD SYSTEM

[1] [Anonymous], 1978, HDB BINARY PHASE DIA

[2] ION-IRRADIATION STUDIES OF CASCADE DAMAGE IN METALS [J]. JOURNAL OF NUCLEAR MATERIALS, 1982, 108 (1-2) : 33 - 45

[3] LATTICE LOCATION STUDIES IN ION-IMPLANTED VANADIUM SINGLE-CRYSTALS AT VARIOUS TEMPERATURES [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 113 - 118

[4] AZZAM A, UNPUB PHYS REV B

[5] Battaglin G., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P615

[6] GEMMELL DE, 1974, REV MOD PHYS, V45, P129

[7] Gordon RB., 1969, METALS METALLURGY TR

[8] GUINAN MW, 1981, J NUCL MATER, V103, P1319

[9] PULSED ELECTRON-BEAM ANNEALING AND FURNACE ANNEALING OF CU-IMPLANTED AL SINGLE-CRYSTALS [J]. SOLID STATE COMMUNICATIONS, 1982, 44 (05) : 745 - 749

[10] IMPROVEMENT OF LATTICE SITE LOCATION OF GA IMPLANTED INTO AL AFTER PULSED ELECTRON-BEAM ANNEALING [J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 298 - 300

[1] [Anonymous], 1978, HDB BINARY PHASE DIA

[2] ION-IRRADIATION STUDIES OF CASCADE DAMAGE IN METALS [J]. JOURNAL OF NUCLEAR MATERIALS, 1982, 108 (1-2) : 33 - 45

[3] LATTICE LOCATION STUDIES IN ION-IMPLANTED VANADIUM SINGLE-CRYSTALS AT VARIOUS TEMPERATURES [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 113 - 118

[4] AZZAM A, UNPUB PHYS REV B

[5] Battaglin G., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P615

[6] GEMMELL DE, 1974, REV MOD PHYS, V45, P129

[7] Gordon RB., 1969, METALS METALLURGY TR

[8] GUINAN MW, 1981, J NUCL MATER, V103, P1319

[9] PULSED ELECTRON-BEAM ANNEALING AND FURNACE ANNEALING OF CU-IMPLANTED AL SINGLE-CRYSTALS [J]. SOLID STATE COMMUNICATIONS, 1982, 44 (05) : 745 - 749

[10] IMPROVEMENT OF LATTICE SITE LOCATION OF GA IMPLANTED INTO AL AFTER PULSED ELECTRON-BEAM ANNEALING [J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 298 - 300