FIELD-ENHANCED TUNNELING AND BARRIER LOWERING IN AL-N+GAAS-NGAAS SCHOTTKY CONTACTS GROWN BY MBE

被引:9
作者
SHENAI, K
EGLASH, SJ
DUTTON, RW
ZURAKOWSKI, MP
SPICER, WE
机构
[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
[2] HEWLETT PACKARD,SANTA ROSA TECHNOL CTR,SANTA ROSA,CA 95405
关键词
D O I
10.1109/EDL.1984.25934
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:329 / 332
页数:4
相关论文
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