DIFFUSION-MODEL FOR GAP RED LED DEGRADATION

被引:28
作者
JORDAN, AS [1 ]
RALSTON, JM [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1063/1.322423
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:4518 / 4527
页数:10
相关论文
共 24 条
[1]   INTERDEPENDENCE OF STRAIN, PRECIPITATION, AND DISLOCATION FORMATION IN EPITAXIAL SE-DOPED GAAS [J].
ABRAHAMS, MS ;
BLANC, J ;
BUIOCCHI, CJ .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) :3277-3287
[2]  
BERGH AA, 1970, 8TH IEEE ANN P REL P, P48
[3]   SPECTROSCOPIC OBSERVATION OF A VACANCY COMPLEX IN GAP [J].
BHARGAVA, RN ;
KURTZ, SK ;
VINK, AT ;
PETERS, RC .
PHYSICAL REVIEW LETTERS, 1971, 27 (04) :183-+
[4]  
BOGDANOWICZ CM, UNPUBLISHED
[5]   DEPENDENCE OF DIFFUSION COEFFICIENT ON FERMI LEVEL - ZINC IN GALLIUM ARSENIDE [J].
CASEY, HC ;
PANISH, MB ;
CHANG, LL .
PHYSICAL REVIEW, 1967, 162 (03) :660-+
[6]  
CASEY HC, 1972, ATOMIC DIFFUSION SEM
[7]  
CRANK J, 1956, MATHEMATICS DIFFUSIO
[8]  
DEAN PJ, 1971, PHYS REV B, V4, P259
[9]   PERMANENT DEGRADATION OF GAAS TUNNEL DIODES [J].
GOLD, RD ;
WEISBERG, LR .
SOLID-STATE ELECTRONICS, 1964, 7 (11) :811-821
[10]   DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J].
HALL, RN ;
RACETTE, JH .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :379-&