ELECTRICAL CHARACTERIZATION OF THE GAAS/ALXGA1-XAS INTERFACE BY CONDUCTANCE DLTS

被引：7

作者：

MARACAS, GN ^{[1
]}

LAIDIG, WD ^{[1
]}

WITTMAN, HR ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 03期

关键词：

D O I：

10.1116/1.582846

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：599 / 603

页数：5

共 8 条

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[5]

MARACAS GN, 1982, THESIS CORNELL U

[6] 2-DIMENSIONAL ELECTRON-GAS AT A SEMICONDUCTOR-SEMICONDUCTOR INTERFACE [J].

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STURGE, MD .

SOLID STATE COMMUNICATIONS, 1979, 29 (10) :705-709

[7]

STORMER HL, 1981, APPL PHYS LETT, V39, P43

[8] OBSERVATION OF 2-DIMENSIONAL ELECTRONS IN LPE-GROWN GAAS-ALXGA1-XAS HETEROJUNCTIONS [J].

TSUI, DC ;

LOGAN, RA .

APPLIED PHYSICS LETTERS, 1979, 35 (02) :99-101

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