RELIABILITY OF INGAAS PHOTODIODES FOR SL APPLICATIONS

被引：26

作者：

SAUL, RH

CHEN, FS

SHUMATE, PW

机构：

[1] AT&T Bell Lab, USA, AT&T Bell Lab, USA

来源：

AT&T TECHNICAL JOURNAL | 1985年 / 64卷 / 03期

关键词：

ACTIVATION ENERGY - OVERSTRESS CONDITIONS - TAT-8 SUBMARINE CABLE;

D O I：

10.1002/j.1538-7305.1985.tb00450.x

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：861 / 882

页数：22

共 17 条

[1]

CHEN FZ, UNPUB

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CHEN, FS ;

ERMANIS, F .

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[3]

JENKINS DG, 1982, SEP IEEE SPEC C LIGH

[4] SMALL AREA INGAAS-INP P-I-N PHOTO-DIODES - FABRICATION, CHARACTERISTICS AND PERFORMANCE OF DEVICES IN 274-MB-S AND 45-MB-S LIGHTWAVE RECEIVERS AT 1.31 MU-M WAVELENGTH [J].

LEE, TP ;

BURRUS, CA ;

DENTAI, AG ;

OGAWA, K .

ELECTRONICS LETTERS, 1980, 16 (04) :155-156

[5]

LICHTMANN LS, 1982, SEP IEEE SPEC C LIGH

[6]

LORIMOR OG, UNPUB

[7]

NEMCHIK JM, 1983, C REC, V1, P91

[8] LOW-LEAKAGE, HIGH-EFFICIENCY, RELIABLE VPE INGAAS 1.0-1.7 MU-M PHOTO-DIODES [J].

OLSEN, GH .

ELECTRON DEVICE LETTERS, 1981, 2 (09) :217-219

[9]

OLSEN GH, 1982, APR TOP M OPT FIB CO

[10]

PEARSALL TP, 1981, J QUANTUM ELECTRON, V17, P255

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