FAILURE MODE ANALYSIS OF PLANAR ZINC-DIFFUSED IN0.53GA0.47AS P-I-N PHOTODIODES

被引：15

作者：

CHIN, AK

CHEN, FS

ERMANIS, F

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 06期

关键词：

D O I：

10.1063/1.333420

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1596 / 1606

页数：11

共 31 条

[1]

Armstrong H. L., 1957, IRE T ELECTRON DEV, VED-4, P15

[2]

BURRUS CA, UNPUB

[3] METALLURGICAL BEHAVIOR OF GOLD-BASED OHMIC CONTACTS TO THE INP/INGAASP MATERIAL SYSTEM [J].

CAMLIBEL, I ;

CHIN, AK ;

ERMANIS, F ;

DIGIUSEPPE, MA ;

LOURENCO, JA ;

BONNER, WA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) :2585-2590

[4]

CAPASSO F, 1979, IEDM WASHINGTON

[5]

CHEN FZ, UNPUB

[6]

CHIN A, UNPUB

[7]

Chin A. K., 1983, Materials Letters, V1, P152, DOI 10.1016/0167-577X(83)90006-X

[8] LOW DARK-CURRENT, HIGH-EFFICIENCY PLANAR IN0.53 GA0.47 AS-INP P-I-N PHOTO-DIODES [J].

FORREST, SR ;

CAMLIBEL, I ;

KIM, OK ;

STOCKER, HJ ;

ZUBER, JR .

ELECTRON DEVICE LETTERS, 1981, 2 (11) :283-285

[9]

GROVES SH, 1983, 2ND NATO WORKSH MAT

[10]

HAMAMSY ME, UNPUB

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