TEMPERATURE DEPENDENCE OF ELECTRICAL RESISTIVITY IN N-TYPE GASB

被引：21

作者：

ROBINSON, JE

RODRIGUEZ, S

机构：

来源：

PHYSICAL REVIEW | 1965年 / 137卷 / 2A期

关键词：

D O I：

10.1103/PhysRev.137.A663

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：A663 / +

页数：1

共 6 条

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[2] BECKER WM, TO BE PUBLISHED
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DINGLE, RB
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1952, 211 (1107): : 517 - 525
[4] MOTT NF, 1936, THEORY PROPERTIES ME, P292
[5] IONIZED IMPURITY SCATTERING IN DEGENERATE MANY-VALLEY SEMICONDUCTORS
ROBINSON, JE
RODRIGUEZ, S
[J]. PHYSICAL REVIEW, 1964, 135 (3A): : A779 - +
[6] WILSON AH, 1954, THEORY METALS, P264