PHOTOEMISSION-STUDY OF THE FORMATION OF THE CAF2/GAAS(100) INTERFACE

被引：18

作者：

COLBOW, KM

TIEDJE, T

ROGERS, D

EBERHARDT, W

机构：

[1] FORSCHUNGSZENTRUM JULICH, W-5170 JULICH 1, GERMANY

[2] UNIV BRITISH COLUMBIA, DEPT ELECT ENGN, VANCOUVER V6T 2A6, BC, CANADA

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.43.9672

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The formation of the interface between CaF2 and GaAs(100) has been studied by high-resolution photoemission spectroscopy. CaF2 thin films were deposited in ultrahigh vacuum by evaporation on clean GaAs(100), and subsequently annealed in steps up to 590-degrees-C. By 550-degrees-C, a monolayer of Ca was found to react with As at the interface with an associated loss of approximately one Ga and one F by evaporation per formula unit of CaF2. The thickness of the interfacial layer terminates at one monolayer for the range of annealing conditions studied. The interfacial valence-band offset was found to be 8.5 eV and the Fermi level approaches the GaAs valence-band edge with increasing CaF2 overlayer thickness.

引用

页码：9672 / 9677

页数：6

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