PHOTOEMISSION-STUDIES OF BONDING PROPERTIES AT THE MBE-GROWN CAF2/GAAS INTERFACE

被引：8

作者：

MARUO, YY

OSHIMA, M

WAHO, T

KAWAMURA, T

MAEYAMA, S

MIYAHARA, T

机构：

[1] KEK PHOTON FACTORY, TSUKUBA, IBARAKI 305, JAPAN

[2] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

APPLIED SURFACE SCIENCE | 1989年 / 41-2卷

关键词：

D O I：

10.1016/0169-4332(89)90137-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Surface sensitive analysis using synchrotron radiation photoemission spectroscopy (SRPES) is performed to determine the bonding properties at the CaF2/GaAs(111), CaF2/GaAs(100), and Ca/GaAs(100) interfaces. For the CaF2/GaAs(111) system. layer-by-layer growth of CaF2 is found. CaF2 interfacial states are clearly distinguished from the CaF2 states by using chemical shifts of the Ca 3p and F 2s core levels. The interface is found to be abrupt and the stoichiometry of Ca/F in the first layer differs from that of CaF2. A structural model with an abrupt interface and layer-grown CaF2 film is proposed based on these SRPES results. For the CaF2/GaAs(100) system, a dissociation reaction of CaF2 is found. Ca atoms with no-neighboring F- ions exist at the interface. © 1989.

引用

页码：647 / 653

页数：7

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