OPTICAL-PROPERTIES OF GASB/GA0.69AL0.31SB SINGLE QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY

被引：7

作者：

DASILVA, FWO

RAISIN, C

GAILLARD, S

ALIBERT, C

ROCHER, A

机构：

[1] UNIV MONTPELLIER 2,EQUIPE MICROOPTOELECTR MONTPELLIER,CNRS,UA 392,F-34060 MONTPELLIER,FRANCE

[2] CTR ELABORAT MAT & ETUD STRUDIVALS,CNRS,OPT ELECTR LAB,F-31400 TOULOUSE,FRANCE

来源：

THIN SOLID FILMS | 1990年 / 190卷 / 01期

关键词：

D O I：

10.1016/0040-6090(90)90127-Y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Molecular beam epitaxial GaSb/Ga0.69Al0.31Sb quantum well structures were characterized by electrorelfectance and transmission electron microscopy. The optical properties analysed are in good agreement with the predictions of a simple model of confined layer states. © 1990.

引用

页码：21 / 27

页数：7

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