ELECTRONIC-STRUCTURE AND ATOMIC ARRANGEMENT AROUND ZR SUBSTITUTED FOR Y IN Y2O3

被引:48
作者
THROMAT, N [1 ]
NOGUERA, C [1 ]
GAUTIER, M [1 ]
JOLLET, F [1 ]
DURAUD, JP [1 ]
机构
[1] UNIV PARIS 11,PHYS SOLIDES LAB,F-91405 ORSAY,FRANCE
来源
PHYSICAL REVIEW B | 1991年 / 44卷 / 15期
关键词
D O I
10.1103/PhysRevB.44.7904
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The local geometric and electronic structure around a zirconium atom substituted for yttrium in Y2O3 was investigated both experimentally and theoretically. X-ray-absorption measurements were performed at the Y and Zr K and L(II) edges, in the extended x-ray-absorption fine-structure and x-ray-absorption near-edge-spectroscopy (XANES) regimes. The main results show a sixfold coordination of Zr, like Y, and a contraction of the Zr-O distances compared to the Y-O ones. The XANES spectra are well reproduced by the calculated local densities of states around Y and Zr in the conduction band, with p and d character. The theoretical approach relies on a semiempirical self-consistent tight-binding method performed on clusters of increasing sizes centered around either Y or Zr. Our calculation shows that, when substituting Zr for Y in Y2O3, localized electronic levels do not appear in the band gap, as the energy difference between the O 2p and the cation 4d electronic levels is not changed. As the distance contraction around Zr increases the electron-delocalization effects, an increase of the charge transfer between anion and cation is obtained, leading to a more covalent bond. A preliminary understanding of the compensating charge around the doping Zr atom is given: the additional valence electron is almost equally shared between Zr and its Y neighbors.
引用
收藏
页码:7904 / 7911
页数:8
相关论文
共 13 条
[1]  
[Anonymous], ELECTRONIC STRUCTURE
[2]  
DUWEZ P, 1981, J ELECTROCHEM SOC, V98, P356
[3]   STUDY OF THERMALLY OXIDIZED YTTRIUM FILMS ON SILICON [J].
GURVITCH, M ;
MANCHANDA, L ;
GIBSON, JM .
APPLIED PHYSICS LETTERS, 1987, 51 (12) :919-921
[4]   NEW TIGHT-BINDING PARAMETERS FOR COVALENT SOLIDS OBTAINED USING LOUIE PERIPHERAL STATES [J].
HARRISON, WA .
PHYSICAL REVIEW B, 1981, 24 (10) :5835-5843
[5]   COULOMB INTERACTIONS IN SEMICONDUCTORS AND INSULATORS [J].
HARRISON, WA .
PHYSICAL REVIEW B, 1985, 31 (04) :2121-2132
[6]   ELECTRONIC-STRUCTURE OF YTTRIUM-OXIDE [J].
JOLLET, F ;
NOGUERA, C ;
THROMAT, N ;
GAUTIER, M ;
DURAUD, JP .
PHYSICAL REVIEW B, 1990, 42 (12) :7587-7595
[7]  
Kaminskii A.A., 1981, LASER CRYSTALS
[8]   DEFECT ENERGETICS AND THEIR RELATION TO NONSTOICHIOMETRY IN OXIDES [J].
MACKRODT, WC .
SOLID STATE IONICS, 1984, 12 (MAR) :175-188
[9]  
NORBY T, 1987, ADV CERAMICS, V0023, P00107
[10]  
SEVIER KD, 1972, LOW ENERGY ELECTRON, P228