HETEROEPITAXIALLY GROWN DIAMOND ON A C-BN (111) SURFACE

被引：43

作者：

WANG, L

PIROUZ, P

ARGOITIA, A

MA, JS

ANGUS, JC

机构：

[1] CASE WESTERN RESERVE UNIV,DEPT CHEM ENGN,CLEVELAND,OH 44106

[2] CASE WESTERN RESERVE UNIV,CLEVELAND,OH 44106

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 10期

关键词：

D O I：

10.1063/1.109723

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A continuous diamond film with a thickness of about 10 mum was grown on {111} faces of a single-crystal cubic boron nitride (c-BN) by hot-filament chemical vapor deposition (CVD). Cross-sectional selected area diffraction pattern (SADP) and high resolution electron microscopy (HREM) of the diamond/c-BN interface show that the diamond has a parallel orientation relationship with respect to the substrate.

引用

收藏

页码：1336 / 1338

页数：3

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