CARRIER RECOMBINATION AT DISLOCATIONS IN EPITAXIAL GALLIUM-PHOSPHIDE LAYERS

被引：12

作者：

DIMITRIADIS, CA ^{[1
]}

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN,MANCHESTER M60 1QD,LANCS,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 07期

关键词：

D O I：

10.1016/0038-1101(83)90017-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：633 / 637

页数：5

共 16 条

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[7] PHOTOLUMINESCENCE AT DISLOCATION IN GAAS [J].

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[8] DETERMINATION OF SOLIDUS AND GALLIUM AND PHOSPHORUS VACANCY CONCENTRATIONS IN GAP [J].

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[10]

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