SEM CATHODOLUMINESCENCE STUDIES OF DISLOCATION RECOMBINATION IN GAP

被引：28

作者：

DIMITRIADIS, CA

HUANG, E

DAVIDSON, SM

机构：

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 11-1期

关键词：

D O I：

10.1016/0038-1101(78)90218-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1419 / 1423

页数：5

共 18 条

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[3] HIGH-RESOLUTION CATHODOLUMINESCENCE ANALYSIS SYSTEM [J].

DAVIDSON, SM ;

RASUL, A .

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[4] SEM CATHODE-LUMINESCENT STUDIES OF PLASTICALLY DEFORMED GALLIUM-PHOSPHIDE [J].

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IQBAL, MZ ;

NORTHROP, DC .

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[5] DEEP HOLE TRAPS IN N-TYPE LIQUID ENCAPSULATED CZOCHRALSKI GAP [J].

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DALY, DF ;

KNOX, WP .

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[6] TOWARD A UNIFIED THEORY OF URBACHS RULE AND EXPONENTIAL ABSORPTION EDGES [J].

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[7]

HAMILTON B, 1975, APPL PHYS LETT, V26, P12

[8] DISLOCATION-LIMITED MINORITY-CARRIER LIFETIME IN N-TYPE GAP [J].

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WIGHT, DR .

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[9]

METZ S, 1977, I PHYS C SER A, V33, P66

[10]

NICKLIN R, 1971, J PHYS C, V2, P344

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