EFFECT OF DISLOCATIONS ON GREEN ELECTROLUMINESCENCE EFFICIENCY IN GAP GROWN BY LIQUID-PHASE EPITAXY

被引：64

作者：

BRANTLEY, WA ^{[1
]}

LORIMOR, OG ^{[1
]}

DAPKUS, PD ^{[1
]}

HASZKO, SE ^{[1
]}

SAUL, RH ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 06期

关键词：

D O I：

10.1063/1.321941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2629 / 2637

页数：9

相关论文

共 27 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS
ABRAHAMS, MS
BUIOCCHI, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &
[2] LOCALIZED PLASTIC-DEFORMATION OF GAP AND GAAS GENERATED BY THERMOCOMPRESSION BONDING
BRANTLEY, WA
HARRISON, DA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (09) : 1281 - 1284
[3] DEFECTS IN EPITAXIAL GALLIUM PHOSPHIDE LAYERS
BROWN, AS
SPRINGTHORPE, AJ
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 7 (02): : 495 - +
[4] INVESTIGATION OF INHOMOGENEITIES IN GAAS BY ELECTRON-BEAM EXCITATION
CASEY, HC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 153 - +
[5] CHRISTIAN JW, 1965, THEORY TRANSFORMATIO, pCH19
[6] KINETICS OF RECOMBINATION IN NITROGEN-DOPED GAP
DAPKUS, PD
HACKETT, WH
LORIMOR, OG
BACHRACH, RZ
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) : 4920 - 4930
[7] EFFECTS OF DISLOCATION DENSITY ON PROPERTIES OF LIQUID-PHASE EPITAXIAL GAAS
ETTENBERG, M
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 901 - 906
[8] ETTENBERG M, 1973, 4TH P INT S GALL ARS, P29
[9] SCANNING ELECTRON-MICROSCOPE INVESTIGATION OF ETCHING PHENOMENA IN GAP ELECTROLUMINESCENT DIODES
HACKETT, WH
DIXON, RW
MCGAHAN, TE
KAMMLOTT, GW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (07) : 973 - &
[10] SCANNING ELECTRON-MICROSCOPE CHARACTERIZATION OF GAP RED-EMITTING DIODES
HACKETT, WH
SAUL, RH
KAMMLOTT, GW
DIXON, RW
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2857 - +