DEFECTS IN EPITAXIAL GALLIUM PHOSPHIDE LAYERS

[1] STRESSES IN HETEROEPITAXIAL LAYERS - GAAS1-XPX ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3754 - &

[2] DISLOCATIONS AND PRECIPITATES IN GAAS INJECTION LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) : 1973 - &

[3] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 223 - &

[4] ELECTRICAL MEASUREMENTS + X-RAY LATTICE PARAMETER MEASUREMENTS OF GAAS DOPED WITH SE TE ZN + CD + STRESS EFFECTS OF THESE ELEMENTS AS DIFFUSANTS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) : 2462 - &

[5] HIGH-EFFICIENCY RED-EMITTING GAP DIODES GROWN BY SINGLE EPITAXY ON SOLUTION-GROWN (ETA APPROXIMATELY 6 PERCENT) AND CZOCHRALSKI (ETA APPROXIMATELY 2 PERCENT) SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1970, 16 (12) : 477 - &

[6] HACKETT WH, 1970, MAY EL SOC M LOS ANG

[7] Defects in Epitaxial Films of Semiconducting Compounds with the Sphalerite Structure [J]. JOURNAL OF MATERIALS SCIENCE, 1966, 1 (03) : 280 - 295

[8] COMPOSITIONAL X-RAY TOPOGRAPHY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (06) : 567 - &

[9] DIRECT OBSERVATION OF INDIVIDUAL DISLOCATIONS BY X-RAY DIFFRACTION [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (03) : 597 - 598

[10] METHOD FOR THE DETECTION OF DISLOCATIONS IN SILICON BY X-RAY EXTINCTION CONTRAST [J]. PHYSICAL REVIEW, 1958, 110 (06): : 1465 - 1466

[1] STRESSES IN HETEROEPITAXIAL LAYERS - GAAS1-XPX ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3754 - &

[2] DISLOCATIONS AND PRECIPITATES IN GAAS INJECTION LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) : 1973 - &

[3] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 223 - &

[4] ELECTRICAL MEASUREMENTS + X-RAY LATTICE PARAMETER MEASUREMENTS OF GAAS DOPED WITH SE TE ZN + CD + STRESS EFFECTS OF THESE ELEMENTS AS DIFFUSANTS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) : 2462 - &

[5] HIGH-EFFICIENCY RED-EMITTING GAP DIODES GROWN BY SINGLE EPITAXY ON SOLUTION-GROWN (ETA APPROXIMATELY 6 PERCENT) AND CZOCHRALSKI (ETA APPROXIMATELY 2 PERCENT) SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1970, 16 (12) : 477 - &

[6] HACKETT WH, 1970, MAY EL SOC M LOS ANG

[7] Defects in Epitaxial Films of Semiconducting Compounds with the Sphalerite Structure [J]. JOURNAL OF MATERIALS SCIENCE, 1966, 1 (03) : 280 - 295

[8] COMPOSITIONAL X-RAY TOPOGRAPHY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (06) : 567 - &

[9] DIRECT OBSERVATION OF INDIVIDUAL DISLOCATIONS BY X-RAY DIFFRACTION [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (03) : 597 - 598

[10] METHOD FOR THE DETECTION OF DISLOCATIONS IN SILICON BY X-RAY EXTINCTION CONTRAST [J]. PHYSICAL REVIEW, 1958, 110 (06): : 1465 - 1466