SCANNING ELECTRON-MICROSCOPE INVESTIGATION OF ETCHING PHENOMENA IN GAP ELECTROLUMINESCENT DIODES

被引：6

作者：

HACKETT, WH

DIXON, RW

MCGAHAN, TE

KAMMLOTT, GW

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 07期

关键词：

D O I：

10.1149/1.2404380

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：973 / &

共 19 条

[1] P-N JUNCTION REVEALED BY ELECTROLYTIC ETCHING [J].

BILLIG, E ;

DOWD, JJ .

NATURE, 1953, 172 (4368) :115-115

[2] EXPERIMENTS ON THE INTERFACE BETWEEN GERMANIUM AND AN ELECTROLYTE [J].

BRATTAIN, WH ;

GARRETT, CGB .

BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (01) :129-176

[3]

FULLER CS, 1956, J APPL PHYS, V27, P550

[4]

FULLER CS, 1956, Patent No. 2740700

[5] DIRECT MEASUREMENT OF VERY SHORT MINORITY-CARRIER DIFFUSION LENGTHS IN SEMICONDUCTORS [J].

HACKETT, WH .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (08) :3249-&

[6]

HACKETT WH, 1970, MAY LOS ANG M SOC

[7]

HACKETT WH, 1971, DEVICE RES C U MICHI

[8] SIMPLE METHOD OF REVEALING P-N JUNCTIONS IN GERMANIUM [J].

JACKSON, RW .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (03) :309-310

[9] A PULSE STAINING METHOD FOR DELINEATING N-N+ AND P-P+ JUNCTIONS IN SILICON [J].

JOYCE, BA .

SOLID-STATE ELECTRONICS, 1962, 5 (MAR-A) :102-&

[10] PREPARATION AND PROPERTIES OF SOLUTION-GROWN EPITAXIAL P-N JUNCTIONS IN GAP [J].

LORENZ, MR ;

PILKUHN, M .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) :4094-&

← 1 2 →