WEAK LOCALIZATION OF TWO-DIMENSIONAL ELECTRONS IN GAAS-ALXGA1-XAS HETEROSTRUCTURES

被引：80

作者：

LIN, BJF ^{[1
]}

PAALANEN, MA ^{[1
]}

GOSSARD, AC ^{[1
]}

TSUI, DC ^{[1
]}

机构：

[1] AT & T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.29.927

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：927 / 934

页数：8

共 27 条

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[7] MAGNETORESISTANCE IN SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS - EVIDENCE OF WEAK LOCALIZATION AND CORRELATION [J].

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[8] OBSERVATION OF A NON-OHMIC HALL RESISTIVITY AT LOW-TEMPERATURES IN A TWO-DIMENSIONAL ELECTRON-GAS [J].

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[9]

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[10]

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