NEW PHENOMENON IN ABSORPTION OF OXYGEN ON SILICON

被引:35
作者
GARNER, CM
LINDAU, I
SU, CY
PIANETTA, P
MILLER, JN
SPICER, WE
机构
关键词
D O I
10.1103/PhysRevLett.40.403
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:403 / 406
页数:4
相关论文
共 16 条
  • [1] FADLEY CS, 1976, PROGR SOLID STATE CH
  • [2] MULTIPLE OXIDATION-STATES OF AL OBSERVED BY PHOTOELECTRON-SPECTROSCOPY OF SUBSTRATE CORE LEVEL SHIFTS
    FLODSTROM, SA
    BACHRACH, RZ
    BAUER, RS
    HAGSTROM, SBM
    [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (19) : 1282 - 1285
  • [3] PHOTOEMISSION STUDIES OF SURFACE-STATES AND OXIDATION OF GROUP-IV SEMICONDUCTORS
    GARNER, CM
    LINDAU, I
    MILLER, JN
    PIANETTA, P
    SPICER, WE
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 372 - 375
  • [4] GODDARD WA, 1975, SOLID STATE COMMUN, V18, P984
  • [5] HARRISON WA, UNPUBLISHED
  • [6] HARRISON WA, COMMUNICATION
  • [7] OBSERVATION OF A CHARGE-TRANSFER DURING BI OXIDATION AS NOTED FROM FINAL-STATE CHANGES
    HURYCH, Z
    BENBOW, RL
    [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (19) : 1094 - 1098
  • [8] HURYCH Z, 1976, PHYS REV B, V14, P4295
  • [9] ELECTRON ORBITAL ENERGIES OF OXYGEN ADSORBED ON SILICON SURFACES AND OF SILICON DIOXIDE
    IBACH, H
    ROWE, JE
    [J]. PHYSICAL REVIEW B, 1974, 10 (02): : 710 - 718
  • [10] ELECTRONIC-TRANSITIONS OF OXYGEN ADSORBED ON CLEAN SILICON (111) AND (100) SURFACES
    IBACH, H
    ROWE, JE
    [J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1951 - 1957