GROWTH OF III-V TERNARY AND QUATERNARY MIXED-CRYSTALS BY THE ROTATIONARY BRIDGMAN METHOD

The rotationary Bridgman method with high speed rotation of the growth ampoule was used to grow III-V ternary and quaternary mixed crystals. InSb1-xBi(x) single crystals grew a maximum of 17 mm thick, but the Bi content increased gradually with growth. So, by feeding source materials, homogenous InSb(1-x)Bi(x) crystals with x = 0.008 were obtained. These crystals were 15 mm thick with a diameter of 14 mm. Further, a Ga(1-x)In(x)As(y)Sb1-x single crystal layer (x = 0.22 - 0.24, y = 0.12 - 0.10) of 1 mm maximum thickness grew on a GaSb seed by floating a lump of GaAs in the Ga-In-Sb solution.