A NEW TECHNIQUE FOR THE GROWTH OF III-V MIXED-CRYSTAL LAYERS

被引:14
作者
KUMAGAWA, M
OZAWA, T
HAYAKAWA, Y
机构
[1] Shizuoka Univ, Japan
关键词
The authors would like to thank Professor K. Ishikawa and Mr. W. Tomoda for valuable discussions. Thanks are also due to Mr. N. Kikuchi and Miss. M. Watanabe for their assistance. This work is partially supported by a Grant-in-Aid for Scientific Research from the Ministry of Education; Science and Culture;
D O I
10.1016/0169-4332(88)90359-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
8
引用
收藏
页码:611 / 618
页数:8
相关论文
共 8 条
[1]   LIQUID-ENCAPSULATED CZOCHRALSKI GROWTH AND CHARACTERIZATION OF GAAS1-XPX SOLID-SOLUTION SINGLE-CRYSTALS [J].
HIBIYA, T ;
WATANABE, H ;
ONO, H ;
MATSUMOTO, T ;
IWATA, N .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (04) :981-984
[2]   GROWTH OF INSB1-XBIX SINGLE-CRYSTALS BY CZOCHRALSKI METHOD [J].
JOUKOFF, B ;
JEANLOUI.AM .
JOURNAL OF CRYSTAL GROWTH, 1972, 12 (02) :169-&
[3]   GAALAS/GAAS MOCVD GROWTH FOR SURFACE EMITTING LASER [J].
KOYAMA, F ;
UENOHARA, H ;
SAKAGUCHI, T ;
IGA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (07) :1077-1081
[4]   GROWTH OF MULTIPLE THIN-LAYER STRUCTURES IN THE GAAS-ALAS SYSTEM USING A NOVEL VPE REACTOR [J].
LEYS, MR ;
VANOPDORP, C ;
VIEGERS, MPA ;
TALENVANDERMHEEN, HJ .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :431-436
[5]   SUBSTRATE ORIENTATION DEPENDENCE OF THE IN-GA-AS PHASE-DIAGRAM FOR LIQUID-PHASE EPITAXIAL-GROWTH OF IN0.53GA0.47AS ON INP [J].
NAKAJIMA, K ;
OKAZAKI, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) :1424-1432
[8]   LIQUID-PHASE-EPITAXIAL INASYSB1-Y ON GASB SUBSTRATES USING GALNASSB BUFFER LAYERS - GROWTH, CHARACTERIZATION, AND APPLICATION TO MID-IR PHOTODIODES [J].
ZYSKIND, JL ;
SRIVASTAVA, AK ;
DEWINTER, JC ;
POLLACK, MA ;
SULHOFF, JW .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) :2898-2903