SUBSTRATE ORIENTATION DEPENDENCE OF THE IN-GA-AS PHASE-DIAGRAM FOR LIQUID-PHASE EPITAXIAL-GROWTH OF IN0.53GA0.47AS ON INP

被引:15
作者
NAKAJIMA, K
OKAZAKI, J
机构
关键词
D O I
10.1149/1.2114137
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1424 / 1432
页数:9
相关论文
共 26 条
[1]   INCORPORATION OF GA DURING LPE GROWTH OF IN0.53GA0.47AS ON (111)B AND (100) INP SUBSTRATES [J].
ANTYPAS, GA ;
HOUNG, YM ;
HYDER, SB ;
ESCHER, JS ;
GREGORY, PE .
APPLIED PHYSICS LETTERS, 1978, 33 (05) :463-465
[2]   INGAAS DETECTOR FOR 1.0-1.7-MUM WAVELENGTH RANGE [J].
BACHMANN, KJ ;
SHAY, JL .
APPLIED PHYSICS LETTERS, 1978, 32 (07) :446-448
[3]  
BRICE JC, 1973, SERIES MONOGRAPHS SE, V12, P78
[4]   (111) SURFACE TENSIONS OF III-V COMPOUNDS AND THEIR RELATIONSHIP TO SPONTANEOUS BENDING OF THIN CRYSTALS [J].
CAHN, JW ;
HANNEMAN, RE .
SURFACE SCIENCE, 1964, 1 (04) :387-398
[5]   ETCHING BEHAVIOR OF THE (110) AND (100) SURFACES OF INSB [J].
GATOS, HC ;
LAVINE, MC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) :433-436
[6]  
GUGGENHEIM EA, 1967, THERMODYNAMICS, P197
[7]  
HSIEH JJ, 1981, IEEE J QUANTUM ELECT, V17, P118, DOI 10.1109/JQE.1981.1071083
[8]   A HIGH-GAIN IN0.53GA0.47AS-INP AVALANCHE PHOTO-DIODE WITH NO TUNNELING LEAKAGE CURRENT [J].
KIM, OK ;
FORREST, SR ;
BONNER, WA ;
SMITH, RG .
APPLIED PHYSICS LETTERS, 1981, 39 (05) :402-404
[9]   INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER [J].
LEHENY, RF ;
NAHORY, RE ;
POLLACK, MA ;
BALLMAN, AA ;
BEEBE, ED ;
DEWINTER, JC ;
MARTIN, RJ .
ELECTRONICS LETTERS, 1980, 16 (10) :353-355
[10]   AN IN0.53 GA0.47 AS-SI3N4 N-CHANNEL INVERSION MODE MISFET [J].
LIAO, ASH ;
LEHENY, RF ;
NAHORY, RE ;
DEWINTER, JC .
ELECTRON DEVICE LETTERS, 1981, 2 (11) :288-290