ON A DIRECT CONNECTION OF THE TRANSITION-METAL IMPURITY LEVELS TO THE BAND EDGE DISCONTINUITIES IN SEMICONDUCTOR HETEROJUNCTIONS

被引:16
作者
LANGER, JM
HEINRICH, H
机构
来源
PHYSICA B & C | 1985年 / 134卷 / 1-3期
关键词
D O I
10.1016/0378-4363(85)90386-9
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:444 / 449
页数:6
相关论文
共 50 条
[1]  
ALFEROV ZI, 1969, SOV PHYS SEMICOND+, V2, P843
[2]   EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].
ANDERSON, RL .
SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&
[3]   ELECTRICAL CHARACTERIZATION OF GAAS/ALGAAS SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR CAPACITORS AND APPLICATION TO THE MEASUREMENT OF THE GAAS/ALGAAS BAND-GAP DISCONTINUITY [J].
ARNOLD, D ;
KETTERSON, A ;
HENDERSON, T ;
KLEM, J ;
MORKOC, H .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2880-2885
[4]   ENERGY BAND-GAP DISCONTINUITIES IN GAAS-(AL,GA)AS HETEROJUNCTIONS [J].
BATEY, J ;
WRIGHT, SL ;
DIMARIA, DJ .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :484-487
[5]   ON THE ADJUSTABILITY OF THE ABRUPT HETEROJUNCTION BAND-GAP DISCONTINUITY [J].
BAUER, RS ;
SANG, HW .
SURFACE SCIENCE, 1983, 132 (1-3) :479-504
[6]   A UNIVERSAL TREND IN THE BINDING-ENERGIES OF DEEP IMPURITIES IN SEMICONDUCTORS [J].
CALDAS, MJ ;
FAZZIO, A ;
ZUNGER, A .
APPLIED PHYSICS LETTERS, 1984, 45 (06) :671-673
[7]  
CASEY HC, 1978, HETEROSTRUCTURE LA A, P192
[8]   TRANSITION-METAL IMPURITIES IN III-V COMPOUNDS [J].
CLERJAUD, B .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (19) :3615-3661
[9]   DIRECT OBSERVATION OF SUPERLATTICE FORMATION IN A SEMICONDUCTOR HETEROSTRUCTURE [J].
DINGLE, R ;
GOSSARD, AC ;
WIEGMANN, W .
PHYSICAL REVIEW LETTERS, 1975, 34 (21) :1327-1330
[10]  
Dingle R, 1975, FESTKORPERPROBLEME, V15, P21