FACTORS INFLUENCING THE CHEMICAL-VAPOR-DEPOSITION OF ORIENTED ZNO FILMS USING ZINC ACETATE

被引：64

作者：

MAR, GL

TIMBRELL, PY

LAMB, RN

机构：

[1] Surface Science and Technology, School of Chemistry, University of New South Wales

来源：

CHEMISTRY OF MATERIALS | 1995年 / 7卷 / 10期

关键词：

D O I：

10.1021/cm00058a020

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

c-axis-oriented zinc oxide (ZnO) films have been grown on silicon (100) substrates by low-pressure chemical vapor deposition using zinc acetate as the metal-organic source. The chemical transformations of the zinc acetate during sublimation and the subsequent pyrolysis on the substrate were examined. The influence of substrate temperature and water ambient during deposition on the resultant properties of the ZnO films were systematically investigated. The ZnO films were analyzed by X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, UV-visible absorption, X-ray diffraction and scanning electron microscopy. The deposition rate, level of carbon contamination, c-axis orientation, and bandgap of the films were found to be strongly dependent on both the substrate temperature and water ambient pressure. The optimal deposition conditions were obtained using a water ambient pressure of 3 x 10(-3) mbar and substrate temperature of 400 degrees C which produced highly c-axis-oriented ZnO films with minimal (<2.0%) residual carbon contamination.

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页码：1890 / 1896

页数：7

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