SYNCHROTRON RADIATION INVESTIGATION OF H-GAAS(110)

被引：32

作者：

ASTALDI, C

SORBA, L

RINALDI, C

MERCURI, R

NANNARONE, S

CALANDRA, C

机构：

[1] GRP NAZL STRUTTURA MAT,NAPLES,ITALY

[2] UNIV MODENA,DEPARTIMENTO FIS,I-41100 MODENA,ITALY

来源：

SURFACE SCIENCE | 1985年 / 162卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(85)90873-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：39 / 45

页数：7

共 8 条

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[7]

MOILWA W, 1984, PHYS REV B, V29, P6709

[8] OBSERVATION OF GE-INDUCED ELECTRONIC STATES AT THE GE-GAAS(110) INTERFACE BY MEANS OF POLARIZATION-DEPENDENT UPS [J].

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