WAVE-GUIDE-INTEGRATED PIN PHOTODIODE ON INP

被引：39

作者：

BORNHOLDT, C

DOLDISSEN, W

FIEDLER, F

KAISER, R

KOWALSKY, W

机构：

[1] Heinrich-Hertz-Inst fuer, Nachrichtentechnik Berlin GmbH,, Berlin, West Ger, Heinrich-Hertz-Inst fuer Nachrichtentechnik Berlin GmbH, Berlin, West Ger

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 01期

关键词：

INTEGRATED OPTICS - SEMICONDUCTING INDIUM COMPOUNDS - Applications - WAVEGUIDES; OPTICAL;

D O I：

10.1049/el:19870002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An InGaAs PIN photodiode was vertically integrated with an inverted optical rib waveguide in InGaAsP. Guided light was transferred to and absorbed by the photodiode at a rate of 0. 07 dB/ mu m. For detectors with sufficient length ( greater than 300 mu m) a responsivity of 0. 81 A/W was achieved at 1. 3 mu m wavelength.

引用

页码：2 / 4

页数：3

共 5 条

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BORNHOLDT, C
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