GAAS OPTOELECTRONIC INTEGRATED RECEIVER ARRAY EXHIBITING HIGH-SPEED RESPONSE AND LITTLE CROSSTALK

被引：4

作者：

MAKIUCHI, M

HAMAGUCHI, H

KUMAI, T

WADA, O

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 17期

关键词：

D O I：

10.1049/el:19860609

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：893 / 894

页数：2

相关论文

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[1] MONOLITHIC INTEGRATED RECEIVER FRONT END CONSISTING OF A PHOTOCONDUCTIVE DETECTOR AND A GAAS SELECTIVELY DOPED HETEROSTRUCTURE TRANSISTOR
CHEN, CY
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[J]. APPLIED PHYSICS LETTERS, 1985, 46 (07) : 681 - 683
[2] HIGH-SPEED MONOLITHICALLY INTEGRATED GAAS PHOTORECEIVER USING A METAL-SEMICONDUCTOR-METAL PHOTODIODE
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WADA, O
SAKURAI, T
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (11) : 1129 - 1131
[3] MONOLITHIC INTEGRATION OF A METAL-SEMICONDUCTOR METAL PHOTODIODE AND A GAAS PREAMPLIFIER
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SAKURAI, T
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) : 531 - 532
[4] PLANAR MONOLITHIC INTEGRATION OF A PHOTO-DIODE AND A GAAS PRE-AMPLIFIER
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ELMER, BR
BIARD, JR
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (09) : 821 - 823
[5] MAKIUCHI M, 1985, IEEE ELECTRON DEVICE, V6
[6] NOBUHARA H, 1985, DEC IEDM WASH, P650