MONOLITHIC INTEGRATED RECEIVER FRONT END CONSISTING OF A PHOTOCONDUCTIVE DETECTOR AND A GAAS SELECTIVELY DOPED HETEROSTRUCTURE TRANSISTOR

被引：11

作者：

CHEN, CY

OLSSON, NA

TU, CW

GARBINSKI, PA

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 07期

关键词：

D O I：

10.1063/1.95528

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：681 / 683

页数：3

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[1] INTEGRATED DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS PHOTORECEIVER WITH AUTOMATIC GAIN-CONTROL
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[J]. ELECTRON DEVICE LETTERS, 1981, 2 (01): : 7 - 9
[2] GAIN AND BANDWIDTH OF FAST NEAR-INFRARED PHOTODETECTORS - A COMPARISON OF DIODES, PHOTOTRANSISTORS, AND PHOTOCONDUCTIVE DEVICES
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) : 1420 - 1431
[3] HIGH-SENSITIVITY GA0.47IN0.53AS PHOTOCONDUCTIVE DETECTORS PREPARED BY VAPOR-PHASE EPITAXY
CHEN, CY
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[J]. APPLIED PHYSICS LETTERS, 1984, 44 (12) : 1142 - 1144
[4] ULTRAHIGH SPEED MODULATION-DOPED HETEROSTRUCTURE FIELD-EFFECT PHOTODETECTORS
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[J]. APPLIED PHYSICS LETTERS, 1983, 42 (12) : 1040 - 1042
[5] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
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[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[6] MONOLITHIC INTEGRATION OF A GAALAS INJECTION-LASER WITH A SCHOTTKY-GATE FIELD-EFFECT TRANSISTOR
FUKUZAWA, T
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[J]. APPLIED PHYSICS LETTERS, 1980, 36 (03) : 181 - 183
[7] MONOLITHICALLY INTEGRATED IN0.53GA0.47AS-PIN/INP-MISFET PHOTORECEIVER
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[J]. ELECTRONICS LETTERS, 1984, 20 (08) : 314 - 315
[8] PLANAR MONOLITHIC INTEGRATION OF A PHOTO-DIODE AND A GAAS PRE-AMPLIFIER
KOLBAS, RM
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CARNEY, JK
BRADSHAW, DH
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BIARD, JR
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (09) : 821 - 823
[9] MONOLITHIC INTEGRATION OF A VERY LOW THRESHOLD GAINASP LASER AND METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR ON SEMI-INSULATING INP
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[J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 643 - 645
[10] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER
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BEEBE, ED
DEWINTER, JC
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[J]. ELECTRONICS LETTERS, 1980, 16 (10) : 353 - 355