HIGH-POWER AND HIGH-TEMPERATURE OPERATION OF GAINP/ALGAINP STRAINED MULTIPLE QUANTUM-WELL LASERS

被引：26

作者：

MANNOH, M

HOSHINA, J

KAMIYAMA, S

OHTA, H

BAN, Y

OHNAKA, K

机构：

[1] Opto-Electronics Laboratory, Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd., Moriguchi, Osaka 570, 3-1-1, Yagumo-nakamachi

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 11期

关键词：

D O I：

10.1063/1.108776

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High power and high-temperature operation of transverse-mode stabilized 690 nm AlGaInP strained multiple quantum well lasers is described. Three 0.5% biaxially compressive strained GaInP (8 nm) wells were employed in the active region. Low threshold current of 36 mA and very high output power of 60 mW at high temperature up to 100-degrees-C were obtained with 700 mum long lasers, whose facets were coated with antireflection-reflection films. This is, to the best of our knowledge, the first report that an AlGaInP laser has reached a cw output power of 60 mW at a high temperature of 100-degrees-C. Very low degradation rate at 50-degrees-C with 35 mW output power was confirmed.

引用

页码：1173 / 1175

页数：3