DELAYED PHOTOCURRENT AFFECTED BY GAMMA-X RESONANCE IN GAAS/ALAS TYPE-I SHORT-PERIOD SUPERLATTICES

被引：10

作者：

MIMURA, H ^{[1
]}

OHTANI, N ^{[1
]}

HOSODA, M ^{[1
]}

TOMINAGA, K ^{[1
]}

WATANABE, T ^{[1
]}

TANAKA, G ^{[1
]}

FUJIWARA, K ^{[1
]}

机构：

[1] KYUSHU INST TECHNOL, DEPT ELECT ENGN, TOBATA KU, KITAKYUSHU, FUKUOKA 804, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 22期

关键词：

D O I：

10.1063/1.115224

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Delayed photocurrents were observed in GaAs/AlAs type-I short-period superlattices by measuring time-resolved photoresponses under ultrashort optical pulse excitation. According to the envelope function calculations, the X(1) state in AlAs barriers resonates with the Gamma(2) state in the adjacent GaAs wells at a bias voltage where the delayed photocurrents were conspicuous. These results strongly suggest that the dynamic carrier transport process is significantly influenced by X(1)-Gamma(2) resonance effects in the superlattices. (C) 1995 American Institute of Physics.

引用

页码：3292 / 3294

页数：3

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