HYDROGEN-MEDIATED MODEL FOR DEFECT METASTABILITY IN HYDROGENATED AMORPHOUS-SILICON

被引：64

作者：

ZAFAR, S

SCHIFF, EA

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.40.5235

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5235 / 5238

页数：4

共 20 条

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