DEFECTS AND ASSOCIATED ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS

被引:13
作者
DAVIS, EA
机构
关键词
D O I
10.1016/0022-3093(85)90280-7
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:113 / 123
页数:11
相关论文
共 42 条
[1]   ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].
ADLER, D ;
YOFFA, EJ .
PHYSICAL REVIEW LETTERS, 1976, 36 (20) :1197-1200
[2]  
ALLAN DC, 1984, TOPICS APPLIED PHYSI, V56, P6
[3]   MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].
ANDERSON, PW .
PHYSICAL REVIEW LETTERS, 1975, 34 (15) :953-955
[4]   IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J].
COHEN, JD ;
HARBISON, JP ;
WECHT, KW .
PHYSICAL REVIEW LETTERS, 1982, 48 (02) :109-112
[5]   CALCULATION OF THE DYNAMIC-RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATES [J].
COHEN, JD ;
LANG, DV .
PHYSICAL REVIEW B, 1982, 25 (08) :5321-5350
[6]   PHOTOINDUCED CHANGES IN THE BULK-DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON ASSOCIATED WITH THE STAEBLER-WRONSKI EFFECT [J].
COHEN, JD ;
LANG, DV ;
HARBISON, JP ;
SERGENT, AM .
SOLAR CELLS, 1983, 9 (1-2) :119-131
[7]   SPACE-CHARGE SPECTROSCOPY OF THE GAP STATES IN HYDROGENATED AMORPHOUS-SILICON COUNTERDOPED WITH BORON [J].
CULLEN, P ;
HARBISON, JP ;
LANG, DV ;
ADLER, D .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :261-264
[8]  
Davis E. A., 1979, Amorphous semiconductors, P41
[9]  
Davis E. A., 1980, Journal of the Physical Society of Japan, V49, P1139
[10]   ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-SILICON [J].
DERSCH, H ;
STUKE, J ;
BEICHLER, J .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (01) :265-274