EVIDENCE FOR THE DEFECT ORIGIN OF STATES WHICH CONTROL PHOTOELECTRONIC BEHAVIOR OF AMORPHOUS CHALCOGENIDES

被引：18

作者：

ABKOWITZ, M

机构：

来源：

关键词：

D O I：

10.1016/0022-3093(84)90338-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：315 / 320

页数：6

共 7 条

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ENCK, RC
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[2] PHOTOENHANCED METASTABLE DEEP TRAPPING IN AMORPHOUS CHALCOGENIDES NEAR ROOM-TEMPERATURE
ABKOWITZ, M
ENCK, RC
[J]. PHYSICAL REVIEW B, 1983, 27 (12): : 7402 - 7411
[3] ABKOWITZ M, UNPUB PHIL MAG LETT
[4] ABKOWITZ M, 1983, B AM PHYS SOC, V28, P276
[5] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS
KASTNER, M
ADLER, D
FRITZSCHE, H
[J]. PHYSICAL REVIEW LETTERS, 1976, 37 (22) : 1504 - 1507
[6] DEFECT CHEMISTRY OF LONE-PAIR SEMICONDUCTORS
KASTNER, M
FRITZSCHE, H
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (02): : 199 - 215
[7] STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS
MOTT, NF
DAVIS, EA
STREET, RA
[J]. PHILOSOPHICAL MAGAZINE, 1975, 32 (05) : 961 - 996