PHOTOENHANCED METASTABLE DEEP TRAPPING IN AMORPHOUS CHALCOGENIDES NEAR ROOM-TEMPERATURE

被引：51

作者：

ABKOWITZ, M

ENCK, RC

机构：

来源：

PHYSICAL REVIEW B | 1983年 / 27卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.27.7402

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：7402 / 7411

页数：10

相关论文

共 29 条

[1] STRUCTURAL RELAXATION AS A TOOL FOR PROBING THE ORIGIN OF ELECTRONIC GAP STATES IN AMORPHOUS CHALCOGENIDES
ABKOWITZ, M
ENCK, RC
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 831 - 836
[2] CHANGES IN PHOTOELECTRONIC BEHAVIOR OF GLASSES DURING STRUCTURAL RELAXATION
ABKOWITZ, M
[J]. ANNALS OF THE NEW YORK ACADEMY OF SCIENCES, 1981, 371 (OCT) : 170 - 185
[3] XEROGRAPHIC SPECTROSCOPY OF GAP STATES IN AMORPHOUS-SEMICONDUCTORS
ABKOWITZ, M
ENCK, RC
[J]. PHYSICAL REVIEW B, 1982, 25 (04): : 2567 - 2577
[4] XEROGRAPHIC SPECTROSCOPY OF LOCALIZED ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS
ABKOWITZ, M
ENCK, RC
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 443 - 446
[5] ON QUESTION OF CHAIN-END ESR IN AMORPHOUS SELENIUM
ABKOWITZ, M
[J]. JOURNAL OF CHEMICAL PHYSICS, 1967, 46 (11) : 4537 - &
[6] PHOTOELECTRONIC BEHAVIOR OF A-SE AND SOME A-SE - AS ALLOYS IN THEIR GLASS-TRANSITION REGIONS
ABKOWITZ, M
PAI, DM
[J]. PHYSICAL REVIEW B, 1978, 18 (04): : 1741 - 1750
[7] ABKOWITZ M, 1980, 8TH P INT C AM LIQ S, P831
[8] ABKOWITZ M, 1979, SPRINGER SERIES SOLI, V13, P210
[9] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS
ANDERSON, PW
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955
[10] BERGER SB, 1980, 1980 P INT S IND US, P179