DEPTH DISTRIBUTION OF SECONDARY DEFECTS IN 2-MEV BORON-IMPLANTED SILICON

被引：38

作者：

TAMURA, M

NATSUAKI, N

WADA, Y

MITANI, E

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 10期

关键词：

D O I：

10.1063/1.336808

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3417 / 3420

页数：4

共 15 条

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[6]

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[7] THE STRUCTURE AND FORMATION OF ROD DEFECTS IN ION-IMPLANTED SILICON [J].

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[9]

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[10]

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