LOW-OPERATION-VOLTAGE COMB-SHAPED FIELD EMITTER ARRAY

被引:9
作者
ITOH, J [1 ]
TSUBURAYA, K [1 ]
KANEMARU, S [1 ]
WATANABE, T [1 ]
ITOH, S [1 ]
机构
[1] FUTABA CORP,CHIBA 29943,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 7A期
关键词
VACUUM MICROELECTRONICS; FIELD EMITTER ARRAY; LATERAL FIELD EMITTER ARRAY; COMB-SHAPED FIELD EMITTER ARRAY; FILM-EDGE FIELD EMITTER ARRAY;
D O I
10.1143/JJAP.31.L884
中图分类号
O59 [应用物理学];
学科分类号
摘要
The dependence of emission properties on the structure of comb-shaped lateral field emitter arrays (FEAs) has been investigated. The present FEA consists of an array of rectangular emitter tips with 3-mu-m-wide edges and a gate self-aligned to the emitter. It was found from experimental results that the ratio of pitch (=p) to edge width (=a) of the array had a strong influence on the emission properties, and that p/a approximately 3 was an optimum ratio to lower the operation voltage. Under this condition, an emission current of 1.4-mu-A/tip was obtained at a gate voltage of 110 V.
引用
收藏
页码:L884 / L886
页数:3
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