DEPLETION-LAYER CAPACITANCE OF ANY TYPE OF TRANSITION BETWEEN 2 MATERIALS

被引:2
作者
PELLEGRINI, B [1 ]
机构
[1] UNIV PISA,CNR,CTR STUDIO METODI & DISPOSIT,VIA DIOTISALVI 2,56100 PISA,ITALY
关键词
D O I
10.1016/0038-1101(75)90015-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:887 / 889
页数:3
相关论文
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[3]   QUANTUM AND TEMPERATURE EFFECTS ON CAPACITANCE IN DEGENERATE P-N JUNCTIONS [J].
PELLEGRINI, B .
SOLID-STATE ELECTRONICS, 1970, 13 (08) :1175-+
[4]   NEW QUANTUM AND ELECTRONIC THEORY OF METAL-SEMICONDUCTOR CONTACTS [J].
PELLEGRINI, B .
PHYSICAL REVIEW B, 1973, 7 (12) :5299-5312
[5]  
PELLEGRINI B, TO BE PUBLISHED
[6]  
SZE SM, 1969, PHYSICS SEMICONDUCTO, P430