ELECTRICAL-RESISTANCE OF DIAMOND IMPLANTED AT LIQUID-NITROGEN TEMPERATURE WITH CARBON-IONS

被引:28
作者
PRINS, JF
机构
来源
RADIATION EFFECTS LETTERS | 1983年 / 76卷 / 03期
关键词
D O I
10.1080/01422448308209641
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
引用
收藏
页码:79 / 82
页数:4
相关论文
共 5 条
[1]   HARD CONDUCTING IMPLANTED DIAMOND LAYERS [J].
HAUSER, JJ ;
PATEL, JR ;
RODGERS, JW .
APPLIED PHYSICS LETTERS, 1977, 30 (03) :129-130
[2]   HOPPING CONDUCTIVITY IN C-IMPLANTED AMORPHOUS DIAMOND, OR HOW TO RUIN A PERFECTLY GOOD DIAMOND [J].
HAUSER, JJ ;
PATEL, JR .
SOLID STATE COMMUNICATIONS, 1976, 18 (07) :789-790
[3]   A PERCOLATION THEORY APPROACH TO THE IMPLANTATION INDUCED DIAMOND TO AMORPHOUS-CARBON TRANSITION [J].
KALISH, R ;
BERNSTEIN, T ;
SHAPIRO, B ;
TALMI, A .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 52 (3-4) :153-168
[4]   BIPOLAR-TRANSISTOR ACTION IN ION-IMPLANTED DIAMOND [J].
PRINS, JF .
APPLIED PHYSICS LETTERS, 1982, 41 (10) :950-952
[5]   STRUCTURAL TRANSITIONS IN ION-IMPLANTED DIAMOND [J].
VAVILOV, VS ;
KRASNOPEVTSEV, VV ;
MILJUTIN, YV ;
GORODETSKY, AE ;
ZAKHAROV, AP .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 22 (02) :141-143