INFLUENCE OF ACCIDENTAL CHANNELING ON THE ANALYSIS OF OXYGEN IN CRYSTALS USING THE O-16(HE-3,P)F-18 REACTION

被引：2

作者：

BAKRAJI, EH ^{[1
]}

DUCOURET, G ^{[1
]}

BLONDIAUX, G ^{[1
]}

DEBRUN, JL ^{[1
]}

机构：

[1] CNRS,CERI,F-45071 ORLEANS 02,FRANCE

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 56-7卷 / pt 2期

关键词：

D O I：

10.1016/0168-583X(91)95037-E

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Charged particle activation is a reliable method for the analysis of oxygen at trace level. We have used the O-16(He-3,p)F-18 reaction to study the incorporation of oxygen in Ga(1-x)Al(x)As layers prepared under various conditions, by vapour phase epitaxy with organometallic compounds. Irreproducible results were first obtained, and this was attributed to accidental channeling. It is shown that important errors, up to a factor of 3, can be introduced. The error (positive or negative) and its magnitude have been shown to be linked to the distribution of the oxygen atoms on the various lattice sites (interstitial, substitutional).

引用

页码：819 / 820

页数：2

共 7 条

[1] STUDY OF THE LATTICE LOCATION OF OXYGEN IN SEMICONDUCTORS BY COMBINING CHANNELING AND CHARGED-PARTICLE ACTIVATION [J].