MONTE-CARLO SIMULATIONS OF INTERNAL PHOTOEMISSION IN SILICIDE INFRARED DETECTORS

被引：2

作者：

EGAN, JM

机构：

[1] SAAO, Observatory, 7935

来源：

INFRARED PHYSICS | 1991年 / 31卷 / 04期

关键词：

D O I：

10.1016/0020-0891(91)90014-7

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A Monte Carlo simulation of the internal photoemission process in silicides is presented. The results are compared with those of other authors and found to be in excellent agreement. The simulation has been extended to a 3-D geometry. A number of possible new configurations for IR devices are suggested which could vastly improve the quantum efficiency of these devices.

引用

页码：395 / 400

页数：6

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