SYSTEMATICS OF ELECTRON-HOLE LIQUID CONDENSATION FROM STUDIES OF SILICON WITH VARYING UNIAXIAL-STRESS

被引：37

作者：

FORCHEL, A ^{[1
]}

LAURICH, B ^{[1
]}

WAGNER, J ^{[1
]}

SCHMID, W ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.25.2730

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2730 / 2747

页数：18

共 77 条

[1] LINE-SHAPES FOR ELECTRON-HOLE PLASMAS IN SEMICONDUCTORS .1. HEAVY-HOLE TO SPIN-ORBIT SPLIT-BAND TRANSITIONS IN ELECTRON-HOLE DROPLETS IN GE [J].

ALDRICH, CH ;

SILVER, RN .

PHYSICAL REVIEW B, 1980, 21 (02) :600-614

[2] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM [J].

BALSLEV, I .

PHYSICAL REVIEW, 1966, 143 (02) :636-&

[3] THEORY OF ELECTRON-HOLE LIQUID IN SEMICONDUCTORS [J].

BENI, G ;

RICE, TM .

PHYSICAL REVIEW B, 1978, 18 (02) :768-785

[4] PROPERTIES OF THE ELECTRON-HOLE LIQUID IN GAP [J].

BIMBERG, D ;

SKOLNICK, MS .

PHYSICAL REVIEW B, 1979, 19 (04) :2231-2245

[5]

BIMBERG D, 1978, 14TH P INT C PHYS SE, P175

[6] ELECTRON-HOLE LIQUIDS IN SEMICONDUCTORS [J].

BRINKMAN, WF ;

RICE, TM .

PHYSICAL REVIEW B, 1973, 7 (04) :1508-1523

[7]

Cho K., 1973, Optics Communications, V8, P412, DOI 10.1016/0030-4018(73)90231-9

[8] THERMODYNAMICS OF AN ELECTRON-HOLE SYSTEM IN SEMICONDUCTORS [J].

COMBESCOT, M .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 86 (01) :349-358

[9] CONDENSATION OF EXCITONS IN GERMANIUM AND SILICON [J].

COMBESCOT, M ;

NOZIERES, P .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (17) :2369-+

[10] ESTIMATION OF CRITICAL-TEMPERATURE OF ELECTRON-HOLE DROPLETS IN GE AND SI [J].

COMBESCOT, M .

PHYSICAL REVIEW LETTERS, 1974, 32 (01) :15-17

← 1 2 3 4 5 6 7 8 →