ASYMMETRIC INTERFACE ROUGHNESS IN SEMICONDUCTORS GROWN BY MOLECULAR-BEAM EPITAXY

被引：8

作者：

DUDLEY, S ^{[1
]}

SINGH, J ^{[1
]}

BAJAJ, KK ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,ANN ARBOR,MI 48109

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 03期

关键词：

D O I：

10.1116/1.583768

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：712 / 715

页数：4

共 6 条

[1] MONTE-CARLO SIMULATIONS OF MBE GROWTH OF III-V SEMICONDUCTORS - THE GROWTH-KINETICS, MECHANISM, AND CONSEQUENCES FOR THE DYNAMICS OF RHEED INTENSITY [J].

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[2] ROLE OF SURFACE MOLECULAR REACTIONS IN INFLUENCING THE GROWTH-MECHANISM AND THE NATURE OF NONEQUILIBRIUM SURFACES - A MONTE-CARLO STUDY OF MOLECULAR-BEAM EPITAXY [J].

GHAISAS, SV ;

MADHUKAR, A .

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[3] ANISOTROPIC TRANSPORT IN MODULATION-DOPED QUANTUM-WELL STRUCTURES [J].

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[4] THEORETICAL-STUDIES OF THE INTRINSIC QUALITY OF GAAS/ALGAAS INTERFACES GROWN BY MBE - ROLE OF KINETIC PROCESSES [J].

SINGH, J ;

BAJAJ, KK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :520-523

[5] THEORETICAL INVESTIGATIONS OF THE NATURE OF THE NORMAL AND INVERTED GAAS-ALGAAS STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

SINGH, J ;

BAJAJ, KK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :576-581

[6] A STUDY OF NOVEL GROWTH APPROACHES TO INFLUENCE THE GROWTH-MECHANISM AND INTERFACE QUALITY IN HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

SINGH, J ;

DUDLEY, S ;

BAJAJ, KK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :878-883

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