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A NOTE ON THE CORRELATION BETWEEN THE SCHOTTKY-DIODE BARRIER HEIGHT AND THE IDEALITY FACTOR AS DETERMINED FROM IV MEASUREMENTS

被引：144
作者：
WAGNER, LF
YOUNG, RW
SUGERMAN, A
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 09期
关键词：
D O I：
10.1109/EDL.1983.25748
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：320 / 322
页数：3
相关论文
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[6]   CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS [J].
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