EFFECTS OF MICRO-BEAM INDUCED DAMAGE ON SINGLE-EVENT CURRENT MEASUREMENTS

被引：29

作者：

HIRAO, T ^{[1
]}

NASHIYAMA, I ^{[1
]}

KAMIYA, T ^{[1
]}

NISHIJIMA, T ^{[1
]}

机构：

[1] ELECTROTECH LAB, TSUKUBA, IBARAKI 305, JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 104卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(95)00414-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Radiation damage introduced by the impact of heavy-ion micro-beams has been studied in connection with its effects on single-event transient currents, which are measured by the digitizing sampling method combined with focused ion micro-beams. It is found that the single-event currents decrease with increasing the repetition number of measurements and that there exists a linear relationship between the ion fluence and the reciprocal of the normalized single-event charge. A single-event damage equation is deduced, where the damage constant is proportional to the defect density calculated using either the Kinchin-Pease model or the TRIM code. Experimental techniques are developed to eliminate the effect of radiation damage.

引用

页码：508 / 514

页数：7

共 10 条

[1] A FIELD-FUNNELING EFFECT ON THE COLLECTION OF ALPHA-PARTICLE-GENERATED CARRIERS IN SILICON DEVICES [J].